Vadym Skyba of IC Mask examines how to calculate and mitigate this consequence of over-polishing Chemical-Mechanical Polishing, or CMP, is used to erode excess deposited materials, such as SiO2… read more →
Oleg Oncea from IC Mask Design analyses the area cost when using a custom design grid for layout design Using a custom design grid in a layout offers many important… read more →
Why low-risk design depends on a clear understanding of MOS parameters
Apart from device type and subtype, and actual connectivity, MOS devices have 4 key parameters that describe their operation and characteristics: channel width (W), channel length (L), number of fingers (NF) and multiplicity (M).
GSA, the voice of the global semiconductor industry, recently hosted a panel of European analogue IC design experts at the GSA & IET International Semiconductor Forum in London on 19 May. The discussion led to a possible solution to the analogue IC design bottleneck.